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IXFH230N075T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
50
85
10.5
S
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
1165
pF
1
2
3
?P
C rss
125
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
23
18
33
15
ns
ns
ns
ns
Terminals: 1 - Gate
3 - Source
e
2 - Drain
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
178
53
41
0.21
nC
nC
nC
0.31 ° C/W
° C/W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
I S V GS = 0V
I SM Repetitive, Pulse width limited by T JM
V SD
I F = 100A, V GS = 0V, Note 1
t rr
I F = 115A, V GS = 0V
I RM
-di/dt = 100A/ μ s
V R = 37V
Q RM
Characteristic Values
Min. Typ. Max.
230
900
1.3
59
3.6
106
A
A
V
ns
A
nC
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
Note 1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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